t4 - lds -0 321 , rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 1 of 5 1n70 39 cc t1 available on commercial versions s ilicon d ual s chottky p ower r ectifier 35 a mp , 1 50 v olt qualified per mil -prf- 19500/73 7 qualified levels: jan, jantx, and jantxv description th is dual schottky r ectifier device is military qualified up to a jan txv level fo r high - reliability applications. they are hermetically sealed in a common cathode configuration offering very fast switching characteristics compared to fast or ultrafast recti fiers. to - 254 aa package also available in : to - 257 aa package ( leaded ) 1n70 4 7cct3 u1 (smd - 1) package ( surface mount ) 1n70 39 ccu 1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered equivalent of 1n7039 ? hermeti cally isolated to - 254aa package ? internal metallurgic al bonds ? temperature independent switching behavior ? jan, jantx, and jantxv q ualifications are available per mil - prf - 19500/73 7 ? rohs compliant versions available (commercial grade only) applications / benefits ? schottky barrier rectifier diodes (dual) for military, space and other high reliability applications ? switching power supplies or other applications requiring extremely fast switching and esse ntially no switching losses. ? low f orward v oltage d rop ? high forward surge capability ? inherently radiation hard >100 krads as described in micronote 050 m axim um ratings @ t a = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, irelan d tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to + 150 o c thermal resistance junction - to - case (2.3 o c/w maximum) r ? jc 1. 9 o c /w working peak reverse voltage v rw m 150 v junction capacitance c j 350 pf average dc output current @ t c = + 100 o c i o 35 a non - repetitive sinusoidal surge current @ t p = 8.3 ms , t c = +25 o c i fsm 1 80 a downloaded from: http:///
t4 - lds -0 321 , rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 2 of 5 1n70 39 cc t1 mechanical and packaging ? cas e: nickel plated c opper base with s teel f rame and c eramic f eed through ? terminal s: nickel plated cu c ored alloy 52 ? pins are hot solder dip (sn63/pb37 ? marking: part number, date code, and polarity symbol ? polarity: see s chema tic on last page ? w eight: approximately 6.5 grams ? see p ackage d imensions on last page. part nomenclature jan 1n7039 cc t1 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level bl ank = commercial jedec type number rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant to - 254 aa package type p olarity (common cathode) symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typically 1mhz ) and specified voltage. i f forward current: the current flowing from the p - type region to the n - type region. i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified voltage v r . t j junction temperature: the temperature of a semiconductor junction. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specified forward current. v r r everse voltage: a positive dc cathode - anode voltage below the breakdown region. downloaded from: http:///
t4 - lds -0 321 , rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 3 of 5 1n70 39 cc t1 electrical characteristics @ t a = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics forward voltage* i f = 1 5 a i f = 35 a i f = 1 5 a, t c = - 55 c i f = 35 a, t c = +1 25 c v f 1.13 1. 60 1. 35 1. 20 v reverse current v r = 1 50 v v r = 1 50 v, t c = +125 c i r 0.5 15 ma * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds -0 321 , rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 4 of 5 1n70 39 cc t1 graphs t c (c) (case) figure 1 temperatu re - current derating (entire package) t1, rectangular pulse duration ( s ec) figure 2 thermal impedance (for each leg) thermal impedance Cz ? jx ( o c/w) switch mode operation maximum io rating (a) downloaded from: http:///
t4 - lds -0 321 , rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 5 of 5 1n70 39 cc t1 package dimensions schematic term 1 = anode term 2 = cathode ter m 3 = anode notes: dimensions 1. dimensions are in inches. ltr inch millimeters 2. millimeters are given for information only. min max min max 3. in accordance with asme y14.5m, diameters are bl 0 .535 0 .545 13.59 13.84 equivalent to x symbology. ch 0 .249 0 .260 6.32 6.60 ld 0 .035 0 .045 0.89 1.14 ll 0 .510 0 .570 12.95 14.48 lo 0 .15 0 bsc 3.81 bsc ls 0 .150 bsc 3.81 bsc mhd 0 .139 0 .149 3.53 3.78 mho 0 .665 0 .685 16.89 17.40 tl 0 .790 0 .800 20.07 20.32 tt 0 .040 0 .050 1.02 1.27 tw 0 .535 0 .545 13.59 13.84 downloaded from: http:///
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